1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs
By Ke Zeng, Abhishek Vaidya, Uttam Singisetti. IEEE Electron Device Letters, 2018
176 citations recorded by the source corpus.
A 400-nm thick composite field plate oxide, with a combination of atomic layer deposited and plasma enhanced chemical vapor deposited SiO<sub>2</sub> layers, is used to enhance the breakdown voltage of spin-on-glass source/drain doped lateral Ga<sub>2</sub>O<sub>3</sub> MOSFET. Three terminal breakdown voltage measured in Fluorinert ambient reaches 1850 V for a <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {gd}}= \textsf {20}\,\,\mu \text{m}$ </tex-math></inline-formula> device. This is the first report of lateral Ga<sub>2</sub>O<sub>3</sub> MOSFET with more than 1.8 kV breakdown voltage. For a device with <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {gd}}= \textsf {1.8}\,\,\mu \text{m}$ </tex-math></inline-formula>, the average electric field strength is calculated to be 2.2 ± 0.2 MV/cm while the field simulation of the device shows a peak field of 3.4 MV/cm.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/6f9485679f5de1f5e355d796cd227477c1938311
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Citations in the corpus
- Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage (2020, methodology): “Approximately 450 nm of composite ALD/PECVD/ ALD oxide layer was deposited, including the bottom gate oxide, which is same as the previous reports [5], [6].”
- Field-Plated Lateral $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2 (2018, background): “BV [2], a high cut-off frequency and maximum oscillation”
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, methodology): “It is worth noting that the dielectric liquid, Fluorinert (FC-770) [27], [171] was used”