Krishna C. Saraswat
Electrical and Electronic Engineering · 2001–2017
A researcher in the Science corpus: 22 papers; trusts 3 researchers and is trusted by 7 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 63 citations into it; #4,942 of 16,539 by trust here, #2,082 by citations
- Atomic and Molecular Physics, and Optics — 25 citations into it
Whom Krishna C. Saraswat trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Krishna C. Saraswat overall
Papers from Krishna C. Saraswat's perspective
Ordered by how strongly the researchers Krishna C. Saraswat trusts endorse each paper. Same corpus, a different order for every researcher.
- AND T
- Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates
- Support vector machines
- Full chip thermal analysis of planar (2-D) and vertically integrated (3-D) high performance ICs (International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138))
- Enhanced semiconductor optical absorption via surface plasmon excitation in metal nanoparticles
- Optical properties of coupled metallic nanorods for field-enhanced spectroscopy
- Si Nano-Photodiode with a Surface Plasmon Antenna (Lasers and Electro-Optics Society Meeting)
- Sub-10 nm carbon nanotube transistor (International Electron Devices Meeting)
- Materials Fundamentals of Gate Dielectrics
- Metal–Oxide RRAM (Proceedings of the IEEE)
Their papers
- Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics (2003) — 405 citations
- Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna (2008) — 683 citations
- Technology and reliability constrained future copper interconnects. I. Resistance modeling (2002) — 242 citations
- 3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration (2001) — 1,061 citations
- Three-dimensional integration of nanotechnologies for computing and data storage on a single chip (2017) — 696 citations
- Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope (2008) — 557 citations
- Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition (2003) — 231 citations
- Interconnect limits on gigascale integration (GSI) in the 21st century (2001) — 536 citations
- Activation and diffusion studies of ion-implanted p and n dopants in germanium (2003) — 259 citations
- On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates (2008) — 371 citations
- Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition (2001) — 198 citations
- Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer (2004) — 200 citations
- Direct bandgap germanium-on-silicon inferred from 5.7% 〈100〉 uniaxial tensile strain [Invited] (2014) — 136 citations
- Achieving direct band gap in germanium through integration of Sn alloying and external strain (2013) — 411 citations
- Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals (2010) — 184 citations
- Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application (2009) — 194 citations
- Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density (2008) — 174 citations
- High performance germanium MOSFETs (2006) — 145 citations
- Germanium n-type shallow junction activation dependences (2005) — 175 citations
- Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality (2004) — 161 citations