Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

By C. Perkins, B. Triplett, Paul C. McIntyre, Krishna C. Saraswat, S. Haukka, M. Tuominen. 2001

198 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3b4e35c3d42af2a43dea251a84c4d4a3e767ca54

How researchers see this paper

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In Electrical and Electronic Engineering

1. Paul C. McIntyre
2. Krishna C. Saraswat
3. Shriram Ramanathan

In Materials Chemistry

1. Paul C. McIntyre
2. Shriram Ramanathan

Citations in the corpus

• Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric (2002, background): “Compared with previous observations of well-defined polycrystallinity in zirconia on silicon dioxide [14], [15], the zirconia film grown directly on”