Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

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Nanowire Transistor Performance Limits and Applications (2008, methodology): “For example, studies of p-type GeNW devices with Pd S/D contacts yielded a hole mobility of 600 cm(2)/V · s [14].”
Size and temperature effects on the fracture mechanisms of silicon nanowires: Molecular dynamics simulations (2010, background): “Semiconducting nanowires (NWs) are key building blocks in nanotechnology, with many potential applications such as nano-scale transistors (Cui et al., 2003; Wang et al., 2003; Huang and Lieber, 2004), sensors (Cui et al.”
Brittle and ductile fracture of semiconductor nanowires – molecular dynamics simulations (2007, background): “With their diameter controllable by the size of the catalyst nanoparticles [1], and with their electronic properties tunable by doping [2], NWs can be used to construct nano-scale electronic devices, such as field effect transistors (FETs) [3, 4, 5], chemical and biological sensors [6], as well as n”
Heat Generation and Transport in Nanometer-Scale Transistors (2006, background): “Transistors made from semiconductor nanowires (NWs) have recently received a lot of attention for their currentcarrying capabilities, low synthesis temperature (as low as 275 � C for CVD-grown germanium NWs [ 51 ]), and relative ease of fabrication and integration with currently existing technologie”