Technology and reliability constrained future copper interconnects. I. Resistance modeling
By Pawan Kapur, J. Mcvittie, Krishna C. Saraswat. 2002
242 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/706fdae3bb431595bfde6d00466912b045420099
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In Atomic and Molecular Physics, and Optics
- Mark S. Lundstrom
- Supriyo Datta
- Daniele Ielmini
- H. Philip Wong
- Sayeef Salahuddin
- Phaedon Avouris
- Joerg Appenzeller
- Anisur Rahman
In Electrical and Electronic Engineering
- Daniele Ielmini
- H. Philip Wong
- Mark S. Lundstrom
- Supriyo Datta
- Sayeef Salahuddin
- Shimeng Yu
- Anisur Rahman
- Jing Guo
In Electronic, Optical and Magnetic Materials
Citations in the corpus
- In-memory computing with resistive switching devices (2018, background): “However, interconnect downscaling causes an increase of series resistance, due to both the geometry scaling and the enhanced surface scattering 99 .”
- Transport effects on signal propagation in quantum wires (2005, result): “5 k /mm and 2 nH/mm, respectively, [18].”