Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition

By Hyoungsub Kim, Paul C. McIntyre, Krishna C. Saraswat. 2003

231 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0b390b1489c8d6ee8501cc0010fbe2edb2a29f26

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Paul C. McIntyre
2. Kenneth E. Goodson
3. Eric Pop

In Materials Chemistry

1. M. Panzer
2. Paul C. McIntyre
3. Jeremy A. Rowlette
4. Kenneth E. Goodson
5. Y. Oshima
6. M. Shandalov
7. Yi wei Chen
8. Eric Pop

Citations in the corpus

• Electronic properties of hafnium oxide: A contribution from defects and traps (2016, unknown): “[84] examined the current–voltage characteristics of amorphous HfO2films in comparison with those of polycrystalline films having monoclinic or tetragonal structure (Fig.”
• Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films (2009, background): “However, to date, most research has focused almost exclusively on the electrical [5], [6] and chemical interface [7], [8] properties of HfO2.”