Metal–Oxide RRAM

By H. Philip Wong, Heng-Yuan Lee, Shimeng Yu, Yu-Sheng Chen, Yi Wu, Pang-Shiu Chen, Byoungil Lee, Frederick T. Chen, M. Tsai. Proceedings of the IEEE, 2012

2,291 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/54aafa53f81b0e880cbaa67cfe71dd372732ad4b

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In Electrical and Electronic Engineering

In Polymers and Plastics

Citations in the corpus

Dot-product engine for neuromorphic computing: Programming 1T1M crossbar to accelerate matrix-vector multiplication (2016, background): “Another approach is to embed learning algorithms on peripheral circuits to automatically tune memristor conductance as synapse weight to achieve logic operations [12] or pattern recognition/ classification functions [6, 7, 8, 9, 13].”
RowHammer: A Retrospective (2019, background): “[202], [204], [245], [253], [254], [259], STT-MRAM [61], [137], and RRAM/ReRAM/memristors [246] are likely to exhibit similar and perhaps even more exacerbated reliability”
PRIME: A Novel Processing-in-Memory Architecture for Neural Network Computation in ReRAM-Based Main Memory (2016, positive): “Recent work demonstrated that some emerging nonvolatile memories, such as metal-oxide resistive random access memory (ReRAM) [7], spin-transfer torque magnetic RAM (STT-RAM) [8], and phase change memory (PCM) [9], have the capability of performing logic and arithmetic operations beyond data storage.”
Phase-Change Memory—Towards a Storage-Class Memory (2017, background): “switching random access memory [19] and magnetoresistive random access memory [20].”
Training and operation of an integrated neuromorphic network based on metal-oxide memristors (2014, background): “However, the practical implementation of such networks is still very challenging, due to the specific physical mechanism of resistance change in most prospective, metal-oxide based memristor – reversible modulation of the concentration profile of oxygen vacancies 11,20,21 .”
Overcoming the challenges of crossbar resistive memory architectures (2015, background): “Tens of binary metal oxide materials have demonstrated resistive switching behavior under an electric field [51] and different ReRAM materials have wildly different characteristics.”
Error Characterization, Mitigation, and Recovery in Flash-Memory-Based Solid-State Drives (2017, background): “…memory (PCM) [97–99, 159, 192, 204, 208], spin-transfer torque magnetic RAM (STT-RAM or STT-MRAM) [96, 140], metal-oxide resistive RAM (RRAM) [191], and memristors [39, 171], are expected to bridge the gap between DRAM and SSDs, providing DRAM-like access latency and energy, and at the same…”