Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

By Eunji Kim, Lingquan Wang, Peter M. Asbeck, Krishna C. Saraswat, Paul C. McIntyre. 2010

184 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/83ec316631b434c2fea1e9b6d125947bf2de7845