Materials Fundamentals of Gate Dielectrics

By A. Demkov, Alexandra Navrotsky. 2005

144 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, General Materials Science

View Paper: https://www.semanticscholar.org/paper/29d168cd6e5aa0e9426d637fb23a06e7467301fd

How researchers see this paper

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In Electrical and Electronic Engineering

1. Krishna C. Saraswat
2. Duygu Kuzum
3. Shimeng Yu
4. Mamidala Jagadesh Kumar
5. John Robertson

Citations in the corpus

• On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates (2008, background): “The third group consists of n-type and p-type GaAs MOS capacitors with a Gd2O3 dielectric.”