Activation and diffusion studies of ion-implanted p and n dopants in germanium

By C. O. Chui, Kailash Gopalakrishnan, Peter B. Griffin, James D. Plummer, Krishna C. Saraswat. 2003

259 citations recorded by the source corpus.

We have demonstrated symmetrically high levels of electrical activation of both p- and n-type dopants in germanium. Rapid thermal annealing of various commonly implanted dopant species were performed in the temperature range of 600–850 °C in germanium substrates. Diffusion studies were also carried out by using different anneal times and temperatures. T-SUPREM™ simulations were used to fit the experimental profiles and to extract the diffusion coefficient of various dopants.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/ac6a9ea3e17db0e55c6ddb17beb58f555d313e3c

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Kailash Gopalakrishnan
2. R. Woo
3. Christoph Jungemann
4. James D. Plummer
5. Peter B. Griffin

Citations in the corpus

• Impact ionization MOS (I-MOS)-Part II: experimental results (2005, methodology): “studies were carried out in Ge [20] to get high active concentrations of n and p-type dopants.”