Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer

By Hyoungsub Kim, Paul C. McIntyre, C. O. Chui, Krishna C. Saraswat, Susanne Stemmer. 2004

200 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/985b1b5532a05030ba6fdd329665a97802305910

How researchers see this paper

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In Electrical and Electronic Engineering

1. Daniele Ielmini
2. Shimeng Yu

Citations in the corpus

• Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap (2010, methodology): “from high-k dielectric films than Al [8].”