Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

By M. Lee, C. Leitz, Z. Cheng, A. Pitera, T. Langdo, M. Currie, G. Taraschi, E. Fitzgerald, D. Antoniadis. 2001

217 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/39269e55256f271384a08a230ecc27bf42912a49

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In Biomedical Engineering

1. Avik W. Ghosh
2. Anisur Rahman
3. Mark S. Lundstrom
4. K. Rumpf
5. P. Granitzer

In Electrical and Electronic Engineering

1. Anisur Rahman
2. Avik W. Ghosh
3. Mark S. Lundstrom
4. Paul C. McIntyre
5. Krishna C. Saraswat
6. Shriram Ramanathan
7. Jing Guo
8. Gerhard Klimeck

Citations in the corpus

• Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric (2002, background): “One such promising material is Ge due to several of its attractive properties including higher carrier mobility [2]”
• Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers (2004, background): “ associated kinetic energies become coupled and the effective mass equation (EME) becomes nontrivial. Such a situation arises for transistors that employ germanium as a high-mobility channel material [19, 20, 21], as well as for alternate wafer orientations of silicon [22]. To extend the application”