Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality

By A. Nayfeh, C. O. Chui, Krishna C. Saraswat, T. Yonehara. 2004

161 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3cbf118644c977494fbfe6b44f6105f912544295