High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

By B. Lu, Tomás Palacios. IEEE Electron Device Letters, 2010

183 citations recorded by the source corpus.

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si substrate and subsequent transfer of the AlGaN/GaN HEMT structure to an insulating carrier wafer (e.g., glass or polycrystalline AlN). By applying this new technology to standard AlGaN/GaN HEMTs grown on Si substrate, an AlGaN/GaN HEMT with breakdown voltage above 1500 V and specific on resistance of 5.3 mΩ·cm2 has been achieved.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a3bed9d66bade39545105b90492b99e6fd098411

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Gaudenzio Meneghesso
2. Yuhao Zhang
3. Matteo Meneghini
4. Tomás Palacios
5. Enrico Zanoni
6. Michael J. Uren
7. Martin Kuball
8. Kevin J. Chen

In Electronic, Optical and Magnetic Materials

1. Tomás Palacios
2. Matteo Meneghini
3. Kevin J. Chen
4. Enrico Zanoni
5. Gaudenzio Meneghesso
6. Min-Chul Sun
7. Nadim Chowdhury
8. Jie Hu

In Materials Chemistry

1. Tomás Palacios
2. Kevin J. Chen
3. Martin Kuball
4. Michael J. Uren
5. S. Karpov

Citations in the corpus

• The 2018 GaN power electronics roadmap (2018, methodology): “[9]), as well as the potential for reusing high-cost substrates (e.”
• High Voltage Vertical GaN p-n Diodes With Avalanche Capability (2013, background): “The material properties of gallium nitride (GaN) are known for some particular period to be highly suitable for high-power and high-frequency devices [1]–[6].”