245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

By Dong Seup Lee, Jinwook Chung, Han Wang, Xiang Gao, Shiping Guo, P. Fay, Tomás Palacios. IEEE Electron Device Letters, 2011

150 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/a6f9b4f36f56c75e83500be2c26b9d16702f8c16

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Tomás Palacios
2. Xiang Gao
3. Shiping Guo
4. Dong Seup Lee

In Electrical and Electronic Engineering

1. Tomás Palacios

In Electronic, Optical and Magnetic Materials

1. Xiang Gao
2. Tomás Palacios
3. Shiping Guo
4. Dong Seup Lee

Citations in the corpus

• InAlN/GaN HEMTs With AlGaN Back Barriers (2011, methodology): “After the ohmic contact process, oxygen plasma was applied to decrease the gate leakage current and prevent RF gm collapse [5], [12].”
• 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier (2011, background): “For example, significant SCEs were observed in a 30-nm-gate-length device with 7-nm barrier thickness [8].”