Graphene-Based Ambipolar RF Mixers
By Han Wang, A. Hsu, Justin Wu, Jing Kong, Tomás Palacios. IEEE Electron Device Letters, 2010
274 citations recorded by the source corpus.
The combination of the unique properties of graphene with new device concepts and nanotechnology can overcome some of the main limitations of traditional electronics in terms of maximum frequency, linearity, and power dissipation. In this letter, we demonstrate the use of the ambipolar-transport properties of graphene for the fabrication of a new kind of RF mixer device. Due to the symmetrical ambipolar conduction in graphene, graphene-based mixers can effectively suppress odd-order intermodulations and lead to lower spurious emissions in the circuit. The mixer operation was demonstrated at a frequency of 10 MHz using graphene grown by chemical vapor deposition on a Ni film and then transferred to an insulating substrate. The maximum operating frequency was limited by the device geometry and the measurement setup, and a high-quality factor was observed with a third-order intercept point of +13.8 dBm.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/419114ed6e6d15ddece02cce6ad43707140b783e
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Citations in the corpus
- Graphene Transistors: Status, Prospects, and Problems (2013, background): “RF mixers [117], [118] and frequency multipliers [72], [119] based on the ambipolar conduction occurring in gapless graphene channels have been realized.”
- Vertical Graphene Base Transistor (2011, background): “This has resulted in RF GFETs with transition frequencies (fT ) of several hundred gigahertz [4], [5], ambipolar RF mixers [6], and frequency multipliers [7].”
- BN/Graphene/BN Transistors for RF Applications (2011, unknown): “frequency, linearity and power dissipation [4, 5].”