12 W/mm AlGaN-GaN HFETs on silicon substrates

By J. W. Johnson, E. Piner, Andrei Vescan, R. Therrien, P. Rajagopal, J. C. Roberts, J. Brown, S. Singhal, K. Linthicum. IEEE Electron Device Letters, 2004

220 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/e1325b92ea9a89571a3f31e3820b2a2f33ffbec5

Citations in the corpus

• High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment (2005, unknown): “formance of depletion-mode (D-mode) AlGaN/GaN HEMTs [1]–[4].”