Jingyu Lin
Condensed Matter Physics · 2000–2014
A researcher in the Science corpus: 25 papers; trusts 5 researchers and is trusted by 4 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 51 citations into it; #571 of 1,948 by trust here, #83 by citations
- Materials Chemistry — 48 citations into it; #9,232 of 11,513 by trust here, #3,109 by citations
- Electrical and Electronic Engineering — 32 citations into it; #6,752 of 16,539 by trust here, #4,044 by citations
- Electronic, Optical and Magnetic Materials — 30 citations into it; #2,228 of 2,886 by trust here, #1,502 by citations
- Atomic and Molecular Physics, and Optics — 28 citations into it; #4,389 of 7,135 by trust here, #1,884 by citations
- Biomedical Engineering — 25 citations into it
- Mechanics of Materials — 9 citations into it
Whom Jingyu Lin trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Jingyu Lin overall
Papers from Jingyu Lin's perspective
Ordered by how strongly the researchers Jingyu Lin trusts endorse each paper. Same corpus, a different order for every researcher.
- Ultraviolet light-emitting diodes based on group three nitrides
- Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
- First-principles calculations for defects and impurities: Applications to III-nitrides
- 270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power
- Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
- Nitride deep-ultraviolet light-emitting diodes with microlens array
- Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures (Science)
- Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers
- AlGaN/GaN high electron mobility transistors with InGaN back-barriers (IEEE Electron Device Letters)
- Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode (IEEE Transactions on Electron Devices)
Their papers
- III-nitride blue and ultraviolet photonic crystal light emitting diodes (2004) — 333 citations
- Deep ultraviolet photoluminescence of water-soluble self-passivated graphene quantum dots. (2012) — 1,610 citations
- Band structure and fundamental optical transitions in wurtzite AlN (2003) — 343 citations
- InGaN/GaN multiple quantum well solar cells with long operating wavelengths (2009) — 369 citations
- Nitride deep-ultraviolet light-emitting diodes with microlens array (2005) — 177 citations
- 200nm deep ultraviolet photodetectors based on AlN (2006) — 190 citations
- Optical and electrical properties of Mg-doped p-type AlxGa1−xN (2002) — 156 citations
- Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers (2012) — 148 citations
- Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material (2011) — 195 citations
- Enhanced light extraction in III-nitride ultraviolet photonic crystal light-emitting diodes (2004) — 140 citations
- III-Nitride full-scale high-resolution microdisplays (2011) — 323 citations
- Unique optical properties of AlGaN alloys and related ultraviolet emitters (2004) — 339 citations
- Mg acceptor level in AlN probed by deep ultraviolet photoluminescence (2003) — 305 citations
- GaN microdisk light emitting diodes (2000) — 222 citations
- Hexagonal boron nitride for deep ultraviolet photonic devices (2014) — 143 citations
- Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells (2010) — 133 citations
- InGaN/GaN multiple quantum well concentrator solar cells (2010) — 205 citations
- Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys (2009) — 167 citations
- Structure and Photoluminescence Study of TiO2 Nanoneedle Texture along Vertically Aligned Carbon Nanofiber Arrays (2008) — 148 citations
- Correlation between optoelectronic and structural properties and epilayer thickness of AlN (2007) — 145 citations