C. Walle
Materials Chemistry · 2000–2014
A researcher in the Science corpus: 36 papers; trusts 11 researchers and is trusted by 45 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 207 citations into it; #520 of 11,513 by trust here, #738 by citations
- Electrical and Electronic Engineering — 119 citations into it; #6,577 of 16,539 by trust here, #2,733 by citations
- Electronic, Optical and Magnetic Materials — 114 citations into it; #376 of 2,886 by trust here, #457 by citations
- Atomic and Molecular Physics, and Optics — 85 citations into it; #3,940 of 7,135 by trust here, #2,408 by citations
- Condensed Matter Physics — 63 citations into it; #203 of 1,948 by trust here, #47 by citations
- Mechanics of Materials — 8 citations into it; #2,838 of 6,291 by trust here, #607 by citations
Whom C. Walle trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts C. Walle overall
- A. Janotti
- J. L. Lyons
- C. G. Van de Walle
- John Robertson
- S. Lany
- K. Ellmer
- C. H. Patterson
- Christoph Freysoldt
- Justin R. Weber
- Audrius Alkauskas
Papers from C. Walle's perspective
Ordered by how strongly the researchers C. Walle trusts endorse each paper. Same corpus, a different order for every researcher.
- Electronic and Optoelectronic Properties of Semiconductor Structures
- Semiconductor Device Physics and Design
- Hydrogen-storage materials for mobile applications (Nature)
- The Physical Implementation of Quantum Computation
- HARD AND SOFT ACIDS AND BASES
- Inhomogeneous Electron Gas
- Nitrogen-vacancy center in diamond: Model of the electronic structure and associated dynamics
- Multipartite Entanglement Among Single Spins in Diamond (Science)
- NMR Based Quantum Information Processing: Achievements and Prospects
- Ultralong spin coherence time in isotopically engineered diamond. (Nature Materials)
Their papers
- First-principles calculations for point defects in solids (2014) — 2,021 citations
- Oxygen vacancies in ZnO (2005) — 1,107 citations
- Oxygen vacancies and donor impurities in β-Ga2O3 (2010) — 988 citations
- Universal alignment of hydrogen levels in semiconductors, insulators and solutions (2003) — 1,104 citations
- First-principles calculations for defects and impurities: Applications to III-nitrides (2004) — 2,827 citations
- First-principles study of native point defects in ZnO (2000) — 1,548 citations
- The electronic structure of β-Ga2O3 (2010) — 169 citations
- Why nitrogen cannot lead to $p$-type conductivity in ZnO (2009) — 359 citations
- Carbon impurities and the yellow luminescence in GaN (2010) — 586 citations
- Role of nitrogen vacancies in the luminescence of Mg-doped GaN (2012) — 135 citations
- Native defects and impurities in InN: First-principles studies using the local-density approximation and self-interaction and relaxation-corrected pseudopotentials (2000) — 191 citations
- Hybrid functional studies of the oxygen vacancy in TiO 2 (2010) — 492 citations
- Oxide interfaces for novel electronic applications (2014) — 162 citations
- Origins of optical absorption and emission lines in AlN (2014) — 174 citations
- Vacancies and small polarons in SrTiO 3 (2014) — 164 citations
- Effects of carbon on the electrical and optical properties of InN, GaN, and AlN (2014) — 323 citations
- Native point defects and dangling bonds in α-Al2O3 (2013) — 222 citations
- Dual behavior of excess electrons in rutile TiO2 (2012) — 153 citations
- Role of self-trapping in luminescence and p -type conductivity of wide-band-gap oxides (2012) — 446 citations
- Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces (2011) — 185 citations