Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer

By Hideki Hirayama, Yusuke Tsukada, Tetsutoshi Maeda, Norihiko Kamata. 2010

243 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/5fcbfdde0ee532a6c32d055280d46ea5a0004a83

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Akira Hirano
2. Hongxing Jiang
3. Jingyu Lin
4. M. Kneissl
5. Matteo Meneghini
6. Hideki Hirayama
7. Ferdinand Scholz

In Condensed Matter Physics

1. M. Kneissl
2. Hongxing Jiang
3. Jingyu Lin
4. Akira Hirano
5. Matteo Meneghini
6. Hideki Hirayama
7. Ferdinand Scholz
8. J. Rass

In Electronic, Optical and Magnetic Materials

1. M. Kneissl
2. Hongxing Jiang
3. Jingyu Lin
4. Akira Hirano
5. Matteo Meneghini
6. Ferdinand Scholz

Citations in the corpus

• Advances in group III-nitride-based deep UV light-emitting diode technology (2010, methodology): “layers on ML-AlN and could demonstrate UV-C LEDs on large-area AlN templates with high crystalline quality and output power levels in the mW range [12, 13].”
• The 2020 UV emitter roadmap (2020, background): “This may be addressed by multiple quantum barrier EBLs [131] which can provide a larger conduction band offset in comparison to AlN and allow for hole tunnelling due to quantum interference.”
• Hexagonal boron nitride for deep ultraviolet photonic devices (2014, methodology): “Although various interesting methods and schemes, such as enhancing p-type doping via minimizing the densities of hole compensating centers such as nitrogen vacancies with three (VN3+) or one (VN1+) positive charges [22–26], polarization and piezoelectric doping [27], p-AlGaN graded layers [28, 29],”