Hideki Hirayama

Journal of Physics D: Applied Physics · 2005–2020

A researcher in the Science corpus: 7 papers; trusts 0 researchers and is trusted by 7 researchers here, as inferred from the citation graph.

Whom Hideki Hirayama trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Arturas Zukauskas

Who trusts Hideki Hirayama overall

1. Yosuke Nagasawa
2. M. Kneissl
3. Akira Hirano
4. Hongxing Jiang
5. Jingyu Lin
6. Hajime Yamamoto

Papers from Hideki Hirayama's perspective

Ordered by how strongly the researchers Hideki Hirayama trusts endorse each paper. Same corpus, a different order for every researcher.

1. Ultraviolet light-emitting diodes based on group three nitrides
2. Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
3. The emergence and prospects of deep-ultraviolet light-emitting diode technologies (Nature Photonics)
4. Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
5. A 271.8 nm deep-ultraviolet laser diode for room temperature operation (Applied Physics Express)
6. Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing
7. Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
8. Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
9. 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates
10. A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire (Applied Sciences)

Their papers

• 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire (2007) — 339 citations
• Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer (2010) — 243 citations
• 222–282 nm AlGaN and InAlGaN‐based deep‐UV LEDs fabricated on high‐quality AlN on sapphire (2009) — 402 citations
• Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes (2005) — 340 citations
• Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency (2017) — 366 citations
• Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes (2014) — 415 citations
• The 2020 UV emitter roadmap (2020) — 404 citations