Ultraviolet light-emitting diodes based on group three nitrides
By Asif Khan, K. Balakrishnan, T. Katona. 2008
944 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Mechanics of Materials
View Paper: https://www.semanticscholar.org/paper/05f104e9b424b3486026e869aca3c33749af67da
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
- Takashi Taniguchi
- Kenji Watanabe
- Hongxing Jiang
- Jingyu Lin
- A. I. Zhmakin
- P. Jarillo-Herrero
- K. Novoselov
- Allan H. MacDonald
In Condensed Matter Physics
- M. Kneissl
- Hongxing Jiang
- Jingyu Lin
- Takashi Taniguchi
- Kenji Watanabe
- Akira Hirano
- Matteo Meneghini
- Xiaobing Luo
In Mechanics of Materials
- Takashi Taniguchi
- Kenji Watanabe
- M. Kneissl
- Hongxing Jiang
- Xiaobing Luo
- Sheng Liu
- Kai Wang
- Ferdinand Scholz
Citations in the corpus
- Advances in group III-nitride-based deep UV light-emitting diode technology (2010, methodology): “Khan et al [10, 11] have pioneered the growth of low–defect-density AlN on sapphire using the migration-enhanced metalorganic chemical vapor deposition (MEMOCVD) in order to improve the defect density and surface morphology [18, 19].”
- Hexagonal boron nitride for deep ultraviolet photonic devices (2014, background): “There is a great need for the development of chip-scale deep ultraviolet (DUV) light sources for a wide range of applications in areas of probing intrinsic fluorescence in a protein, medical equipment/personnel decontamination and sterilization and photocatalysis [1, 2].”
- The 2020 UV emitter roadmap (2020, background): “Driven by the wide range of applications the development of group III-nitride based ultraviolet emitters has gained considerable momentum since the early 2000s [1, 2].”