Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

By C. Pernot, Myunghee Kim, Shinya Fukahori, Tetsuhiko Inazu, Takehiko Fujita, Yosuke Nagasawa, Akira Hirano, M. Ippommatsu, M. Iwaya, S. Kamiyama and 2 more. 2010

231 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/8f8db2ff851e996a6f5cd42c760a3707a6312f53

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Hongxing Jiang
2. Akira Hirano
3. Yosuke Nagasawa
4. Jingyu Lin

In Condensed Matter Physics

1. Hongxing Jiang
2. Jingyu Lin
3. Akira Hirano
4. Yosuke Nagasawa
5. A. I. Zhmakin
6. M. Kneissl

In Electronic, Optical and Magnetic Materials

1. Hongxing Jiang
2. Jingyu Lin
3. Akira Hirano
4. Yosuke Nagasawa

Citations in the corpus

• A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire (2018, methodology): “miscut angles reported in our articles [13,37,38] are shown in Figure 4.”
• Hexagonal boron nitride for deep ultraviolet photonic devices (2014, background): “The EQE of LEDs operating in the UV-C spectral region (around 250 nm) is still quite low (below 3%) [16, 17].”