Band structure and fundamental optical transitions in wurtzite AlN

By Jing Li, K. Nam, M. Nakarmi, Jingyu Lin, Hongxing Jiang, P. Carrier, Suhuai Wei. 2003

343 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/7a0386d68b6eb7df5cba41e95b19beef7d432f10

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. J. Rass
2. M. Kneissl
3. P. Patsalas
4. N. Kalfagiannis
5. S. Kassavetis

In Electronic, Optical and Magnetic Materials

1. M. Kneissl
2. P. Patsalas
3. N. Kalfagiannis
4. S. Kassavetis
5. J. Rass

In Materials Chemistry

1. N. Kalfagiannis
2. S. Kassavetis
3. M. Kneissl
4. P. Patsalas
5. J. Rass

Citations in the corpus

• III-Nitride Ultraviolet Emitters: Technology and Applications (2015, methodology): “On the other hand, preparation of an HVPE layer on an AlN bulk substrate with subsequent removal of that substrate is currently proposed to provide a UV-transparent template suitable for light out-coupling [21].”
• Optical Properties and Plasmonic Performance of Titanium Nitride (2015, background): “2 eV [146]) surfaces that result in stable and sharp TiN/AlN interfaces [147–153].”