270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power

By J. Grandusky, Jianfeng Chen, S. Gibb, M. Mendrick, C. Moe, L. E. Rodak, G. Garrett, M. Wraback, L. Schowalter. 2013

155 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/4c7e959e2a93e65231623f3d70c46c3c69fd060b

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In Condensed Matter Physics

1. Hongxing Jiang
2. Jingyu Lin
3. Akira Hirano
4. Yosuke Nagasawa
5. A. I. Zhmakin
6. M. Kneissl

In Electrical and Electronic Engineering

1. Hongxing Jiang
2. Jingyu Lin
3. A. I. Zhmakin

Citations in the corpus

• Hexagonal boron nitride for deep ultraviolet photonic devices (2014, background): “The EQE among the best DUV LEDs is around 10% or below for devices operating around 270–280 nm at 20 mA [14, 15].”
• A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire (2018, methodology): “RPI 1 Crystal IS Asahi Kasei(JP) AlN +R [17,29]”