Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material

By Rajendra Dahal, Jing Li, S. Majety, B. Pantha, X. Cao, Jingyu Lin, Hongxing Jiang. 2011

195 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/bb01ad922c8abe6d9ec03c57021ba0b68d2ecec4

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In Condensed Matter Physics

1. Hongxing Jiang
2. Jingyu Lin
3. A. I. Zhmakin
4. M. Kneissl

In Materials Chemistry

1. Hongxing Jiang
2. Jingyu Lin

Citations in the corpus

• Hexagonal boron nitride for deep ultraviolet photonic devices (2014, methodology): “The Mg acceptor level measured in epitaxial films of pure hexagonal phase with a relatively heavy doping prepared by MOCVD by our group is around 30 meV [86].”