200nm deep ultraviolet photodetectors based on AlN

By J. Li, Zhaoyang Fan, Rajendra Dahal, M. Nakarmi, Jingyu Lin, Hongxing Jiang. 2006

190 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a211e28780423d2cc8f6bddec08d771cdf9dd25e

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. J. Rass
2. M. Kneissl

In Electronic, Optical and Magnetic Materials

1. M. Kneissl
2. J. Rass

In Materials Chemistry

1. M. Kneissl
2. Feng Huang
3. J. Rass

Citations in the corpus

• Vacuum-ultraviolet photodetectors (2020, background): “c Schematic representation of the AlN device layer structure [96].”
• III-Nitride Ultraviolet Emitters: Technology and Applications (2015, background): “Seed backside plating [88] is a possible means to mitigate both backside evaporation and cracking.”