Optical and electrical properties of Mg-doped p-type AlxGa1−xN

By J. Li, T. Oder, M. Nakarmi, Jingyu Lin, Hongxing Jiang. 2002

156 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/02dd1b90e13d82e852ba8f5ab4ed18d9d510e272

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Hongxing Jiang
2. Jingyu Lin
3. A. I. Zhmakin
4. M. Kneissl

In Electrical and Electronic Engineering

1. Hongxing Jiang
2. Jingyu Lin
3. A. I. Zhmakin

In Mechanics of Materials

1. Hongxing Jiang
2. Jingyu Lin

Citations in the corpus

• Hexagonal boron nitride for deep ultraviolet photonic devices (2014, background): “This issue is caused by the large acceptor activation energies (EA) in AlxGa1–xN (as large as 500–600 meV in AlN) [8, 19–23].”
• A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode (2008, background): “Conductivity tends to decrease with increasing AlN mole fraction due to an increase in donor and acceptor ionization energies, which lowers the carrier concentration, and also as a result of the degradation in crystalline quality, which decreases carrier mobilit”
• Vacuum-ultraviolet photodetectors (2020, background): “The high thermal and chemical stability [54] and excellent radiation resistance make it an ideal material for luminescence [55, 56] and VUV detection [57].”