III-nitride blue and ultraviolet photonic crystal light emitting diodes

By T. Oder, K. Kim, Jingyu Lin, Hongxing Jiang. 2004

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Ultraviolet light-emitting diodes based on group three nitrides (2008, background): “by reduction of the size and period of the array element”
Enhancement of light extraction from light emitting diodes (2011, neutral): “achieved 20-fold enhancement of the light extraction efficiency using optical pumping at 475 nm [249] and 63% and 95%, respectively, enhancement of optical power under current injection in the blue (460 nm) and UV (340 nm) nitride-based LEDs [250].”
Hexagonal boron nitride for deep ultraviolet photonic devices (2014, background): “For UV PC-LEDs under current injection [54], a three-fold enhancement in light extraction [55, 56] and a four-fold enhancement in modulation speed [57] have been realized by PC formation.”
III-Nitride Ultraviolet Emitters: Technology and Applications (2015, background): “concluded that the growth processes of GaN and AlN are mass transport type II limited processes [64, 67, 68].”
One-dimensional ZnO nanostructures: Solution growth and functional properties (2011, background): “Extensive efforts have been made to tackle this problem, such as roughening the emitting surface of the thin film [404, 405], reshaping the geometry of the LED architecture [406, 407], utilizing a resonant cavity [408], coupling with surface plasmons [409], fabricating photonic crystal structures [4”