Nitride deep-ultraviolet light-emitting diodes with microlens array

By Khizar Muhammad, Zhaoyang Fan, K. Kim, Jingyu Lin, Hongxing Jiang. 2005

177 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/073d4639a9457cffc53dd179e59c539a1323105b

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Hongxing Jiang
2. M. Kneissl
3. Jingyu Lin
4. J. Rass

In Condensed Matter Physics

1. J. Rass
2. M. Kneissl
3. Hongxing Jiang
4. Jingyu Lin
5. A. I. Zhmakin

In Electrical and Electronic Engineering

1. M. Kneissl
2. Hongxing Jiang
3. Jingyu Lin
4. J. Rass
5. A. I. Zhmakin

Citations in the corpus

• Hexagonal boron nitride for deep ultraviolet photonic devices (2014, background): “Over the past decade, many groups in the world have established the benefits of inserting an AlN epilayer as a template for the growth of subsequent III-nitride DUV device structures on sapphire and the approach has become a standard today [4–17, 40–42].”
• III-Nitride Ultraviolet Emitters: Technology and Applications (2015, background): “Measurements to determine the C coefficient for UV emitter are even more rudimentary [66]; also theoretical models suggest that the Auger coefficient should become smaller and smaller for shorter emission wavelength [67].”