InGaN/GaN multiple quantum well solar cells with long operating wavelengths
By Rajendra Dahal, B. Pantha, Jing Li, Jingyu Lin, Hongxing Jiang. 2009
369 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Condensed Matter Physics
View Paper: https://www.semanticscholar.org/paper/63825dea975c6cf4c841b6ffeefeea31991c278c
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In Atomic and Molecular Physics, and Optics
In Biomedical Engineering
In Condensed Matter Physics
Citations in the corpus
- Metal assisted chemical etching for high aspect ratio nanostructures: A review of characteristics and applications in photovoltaics (2012, background): “Many applications including solar cells, thermoelectrics, and other optoelectronics that involve structures that are currently fabricated by dry etch or bottom-up growth and assembly techniques, can benefit from this facile fabrication technique tremendously, including GaN based solar cells [78] and”
- III-Nitride Photonics (2010, methodology): “reported the use of In0:3Ga0:7N multiple QWs resulting in open circuit voltage of about 2 V and fill factor of 60% [74].”