Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers

By J. Li, S. Majety, Rajendra Dahal, W. P. Zhao, Jingyu Lin, Hongxing Jiang. 2012

148 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/e96ff3bf192b7bbd97b7836f0267fa61a4ec5eb6

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. Hongxing Jiang
2. Jingyu Lin

In Materials Chemistry

1. Hongxing Jiang
2. Jingyu Lin

Citations in the corpus

• Hexagonal boron nitride for deep ultraviolet photonic devices (2014, methodology): “By leveraging advances in AlN epi-growth, we have recently demonstrated the growth of 2 inch hBN epilayers on sapphire (figure 11(a)), AlN/sapphire template, and SiC substrates by MOCVD [77, 80, 84–89].”