A new nano-electro-mechanical field effect transistor (NEMFET) design for low-power electronics

By H. Kam, Donovan T. Lee, R. T. Howe, Tsu-Jae King. IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 2005

136 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/25ad658258aebe25884ca3d01e866693bbf77c00

How researchers see this paper

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In Electrical and Electronic Engineering

1. Tsu-Jae King Liu
2. Woo Young Choi
3. Zhaonian Yang

Citations in the corpus

• Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec (2007, background): “Some novel devices have been proposed to achieve a sub-60-mV/dec SS such as impact-ionization MOS devices [2], [3], nanoelectromechanical FETs [ 4 ], suspendedgate MOSFETs [5], and tunneling FETs (TFETs) [6]‐[8].”