Fermi pinning-induced thermal instability of metal-gate work functions

By H. Yu, C. Ren, Yee-Chia Yeo, J. Kang, X.P. Wang, H. Ma, Ming-Fu Li, D. Chan, D. Kwong. IEEE Electron Device Letters, 2004

133 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/8ce06bd1fc648cf5ec4cf3fd4b0184e372b2fdb6

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Woo Young Choi

Citations in the corpus

• Hetero-Gate-Dielectric Tunneling Field-Effect Transistors (2010, background): “For fair comparison, from now on, the gate workfunction will be adjusted so that Vonset becomes 0 V. The value of gate workfunction is ∼4.37 eV, which is attainable by using metal gates [ 12 ].”