Demonstration of L-Shaped Tunnel Field-Effect Transistors

By Sang Wan Kim, J. Kim, Tsu-Jae King Liu, Woo Young Choi, Byung-Gook Park. IEEE Transactions on Electron Devices, 2016

271 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/f56e8a9f53d822d8ed7c929d0b2b13a156a7a43c

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In Electrical and Electronic Engineering

1. Zhaonian Yang

Citations in the corpus

• Tunnel Field-Effect Transistor With an L-Shaped Gate (2016, methodology): “Compared with the previous LTFETs [13], [14], the gate in the LG-TFET not only overlaps the n+ pocket in the vertical direction but also in the lateral direction.”