Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

By Woo Young Choi, Woojun Lee. IEEE Transactions on Electron Devices, 2010

445 citations recorded by the source corpus.

View Paper: https://www.semanticscholar.org/paper/ef789fd780163eb6776937b878c723e6652f31c2

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Citations in the corpus

A Dielectric-Modulated Tunnel-FET-Based Biosensor for Label-Free Detection: Analytical Modeling Study and Sensitivity Analysis (2012, background): “, heterogate TFET [7], which enhances the gate modulation near the source end (at the tunnel junction) due to a high-k dielectric and reduces the effective gate bias near the drain end due to a low-k dielectric and thus suppresses the ambipolar conduction.”
Interfacial Charge Analysis of Heterogeneous Gate Dielectric-Gate All Around-Tunnel FET for Improved Device Reliability (2016, methodology): “Abundant techniques have been explored for resolving this issue such as using a smaller band gap material in the source region such as germanium [1], hetero gate dielectric TFET [2], double gate architecture [3], gate to source overlap [4], gate to drain underlap [5], dual material gate [6], n-pocke”
In-Built N+ Pocket p-n-p-n Tunnel Field-Effect Transistor (2014, background): “3(a), which results in a more abrupt change and a lower value of tunneling barrier width [8], [19], [20], (ii) an increase in the lateral electric field which helps in”
2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure (2017, background): “, use of a high-k dielectric, a vertical stacked gate oxide structure of SiO2 and a high-k dielectric or a combination of partly high-k dielectric and partly SiO2 above the Si channel as gate oxide) [10], [11], and multiple gate technology (i.”
Tunnel Field-Effect Transistor With an L-Shaped Gate (2016, background): “The LTFETs adopt perpendicular tunneling to improve the ON-state current, whereas the channel is mainly distributed in the lateral direction and the footprint is larger than 0741-3106 © 2016 IEEE.”