Germanium-source tunnel field effect transistors with record high ION/IOFF

By Sung Hwan Kim, H. Kam, Chenming Calvin Hu, Tsu-Jae King Liu. Symposium on VLSI Technology, 2006

316 citations recorded by the source corpus.

View Paper: https://www.semanticscholar.org/paper/0e88c469f836022682f9ada9b7e96dbe417fe80b

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Citations in the corpus

• Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs (2012, background): “source is based on band-to-band tunneling (BTBT) [1]–[7].”
• Impact of a Spacer Dielectric and a Gate Overlap/Underlap on the Device Performance of a Tunnel Field-Effect Transistor (2011, background): “A significant improvement in the ION/IOFF ratio has been reported in [14] by employing germanium in the source region.”
• Study of Random Dopant Fluctuation Effects in Germanium-Source Tunnel FETs (2011, methodology): “enhance ION [7] in contrast with midgap states, which would degrade SS and IOFF.”
• Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure (2011, background): “[1], [2] or materials [3]–[6] has been made.”
• Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser Annealing (2013, methodology): “Compared with poly-Ge source TFET [23], Ni-silicide pocket source [7], and gate-all-around structure, this proposed paper provides an efficient method to enhance the carriers”
• Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets (2012, methodology): “swing (SS) since the injection mechanism is based on bandto-band tunneling (BTBT) instead of thermal diffusion [1]–[6].”
• Design of U-Shape Channel Tunnel FETs With SiGe Source Regions (2014, unknown): “A fixed charge density of ∼1011 q/cm2 at the gatedielectric/SiGe interface is assumed according to [12].”
• Tunnel Field-Effect Transistors: State-of-the-Art (2014, background): “The majority of these devices are group IV materials, such as Si [26]–[31], Si/Ge [32], strained SiGe [37], and strained Ge [35].”
• Effect of Pocket Doping and Annealing Schemes on the Source-Pocket Tunnel Field-Effect Transistor (2011, background): “In [19], the source pocket formed is on the border of full depletion (it is partially depleted at some gate voltages).”
• Demonstration of L-Shaped Tunnel Field-Effect Transistors (2016, background): “Using a smaller Eg material for the source and a lower Wfn metal for the gate can provide lower Vturn-ON [2]–[4].”