J. Madan

Electrical and Electronic Engineering · 2016

A researcher in the Science corpus: 1 paper; trusts 5 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom J. Madan trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Woo Young Choi
  2. Sneh Saurabh
  3. Avik Chattopadhyay
  4. Mamidala Jagadesh Kumar
  5. Abhijit Mallik
  6. William G. Vandenberghe
  7. Changhwan Shin
  8. K. Boucart

Papers from J. Madan's perspective

Ordered by how strongly the researchers J. Madan trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Tunnel field-effect transistor without gate-drain overlap
  2. Double-Gate Tunnel FET With High-$\kappa$ Gate Dielectric (IEEE Transactions on Electron Devices)
  3. A Comparative Study on the Impacts of Interface Traps on Tunneling FET and MOSFET (IEEE Transactions on Electron Devices)
  4. Demonstration of Tunneling FETs Based on Highly Scalable Vertical Silicon Nanowires (IEEE Electron Device Letters)
  5. Germanium-source tunnel field effect transistors with record high ION/IOFF (Symposium on VLSI Technology)
  6. Study of Random Dopant Fluctuation Effects in Germanium-Source Tunnel FETs (IEEE Transactions on Electron Devices)
  7. Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor (IEEE Transactions on Electron Devices)
  8. Impact of a Spacer Dielectric and a Gate Overlap/Underlap on the Device Performance of a Tunnel Field-Effect Transistor (IEEE Transactions on Electron Devices)
  9. Hetero-Gate-Dielectric Tunneling Field-Effect Transistors (IEEE Transactions on Electron Devices)
  10. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec (IEEE Electron Device Letters)

Their papers