Zhaonian Yang
Electrical and Electronic Engineering · 2016
A researcher in the Science corpus: 1 paper; trusts 4 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 8 citations into it
Whom Zhaonian Yang trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Papers from Zhaonian Yang's perspective
Ordered by how strongly the researchers Zhaonian Yang trusts endorse each paper. Same corpus, a different order for every researcher.
- Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec (IEEE Electron Device Letters)
- The Tunnel Source (PNPN) n-MOSFET: A Novel High Performance Transistor (IEEE Transactions on Electron Devices)
- Germanium-source tunnel field effect transistors with record high ION/IOFF (Symposium on VLSI Technology)
- Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure (IEEE Transactions on Electron Devices)
- In-Built N+ Pocket p-n-p-n Tunnel Field-Effect Transistor (IEEE Electron Device Letters)
- Design of U-Shape Channel Tunnel FETs With SiGe Source Regions (IEEE Transactions on Electron Devices)
- Hetero-Gate-Dielectric Tunneling Field-Effect Transistors (IEEE Transactions on Electron Devices)
- Demonstration of L-Shaped Tunnel Field-Effect Transistors (IEEE Transactions on Electron Devices)
- Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing (International Electron Devices Meeting)
- Band-to-band tunneling in carbon nanotube field-effect transistors. (Physical Review Letters)
Their papers
- Tunnel Field-Effect Transistor With an L-Shaped Gate (2016) — 178 citations