M. Gonschorek
Condensed Matter Physics · 2006–2010
A researcher in the Science corpus: 5 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 36 citations into it
- Electronic, Optical and Magnetic Materials — 22 citations into it
Whom M. Gonschorek trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Papers from M. Gonschorek's perspective
Ordered by how strongly the researchers M. Gonschorek trusts endorse each paper. Same corpus, a different order for every researcher.
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
- Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method
- InAlN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal
- Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction
- Mechanism of anomalous current transport in n-type GaN Schottky contacts
- Current instabilities in GaN-based devices (IEEE Electron Device Letters)
- Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives (IEEE transactions on device and materials reliability)
- Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors (IEEE Electron Device Letters)
- Semiconductor Material and Device Characterization, 3rd Edition
- Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors (IEEE Electron Device Letters)
Their papers
- Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices? (2006) — 192 citations
- High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures (2006) — 311 citations
- 205-GHz (Al,In)N/GaN HEMTs (2010) — 157 citations
- Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03 <= x <= 0.23) (2008) — 169 citations
- Current status of AlInN layers lattice-matched to GaN for photonics and electronics (2007) — 300 citations