Jean-Francois Carlin

Condensed Matter Physics · 2003–2014

A researcher in the Science corpus: 13 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

• Condensed Matter Physics — 53 citations into it
• Electronic, Optical and Magnetic Materials — 27 citations into it
• Mechanics of Materials — 15 citations into it
• Biomedical Engineering — 13 citations into it

Whom Jean-Francois Carlin trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Jan Kuzmik

Who trusts Jean-Francois Carlin overall

1. M. Gonschorek

Papers from Jean-Francois Carlin's perspective

Ordered by how strongly the researchers Jean-Francois Carlin trusts endorse each paper. Same corpus, a different order for every researcher.

1. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
2. Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method
3. InAlN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal
4. Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction
5. Mechanism of anomalous current transport in n-type GaN Schottky contacts
6. AlGaN/GaN HFET reliability (IEEE Microwave Magazine)
7. Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives (IEEE transactions on device and materials reliability)
8. Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures
9. Leakage current by Frenkel–Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures
10. Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors (IEEE Electron Device Letters)

Their papers

• Room temperature polariton lasing in a GaN∕AlGaN multiple quantum well microcavity (2008) — 269 citations
• Room-temperature polariton lasing in semiconductor microcavities. (2007) — 775 citations
• Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field (2014) — 160 citations
• Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices? (2006) — 192 citations
• High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures (2006) — 311 citations
• Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate (2012) — 154 citations
• 205-GHz (Al,In)N/GaN HEMTs (2010) — 157 citations
• Testing the Temperature Limits of GaN-Based HEMT Devices (2010) — 142 citations
• Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03 <= x <= 0.23) (2008) — 169 citations
• Current status of AlInN layers lattice-matched to GaN for photonics and electronics (2007) — 300 citations
• InAlN/GaN HEMTs: a first insight into technological optimization (2006) — 141 citations
• Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials (2005) — 162 citations
• High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN (2003) — 257 citations