Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress

By M. Ťapajna, Oliver Hilt, Eldad Bahat Treidel, J. Wurfl, Jan Kuzmik. IEEE Electron Device Letters, 2016

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Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs (2018, background): “In low-leakage Schottky gate devices, instead, the reverse biased Schottky junction must withstand a high electric field under gate stress conditions, and gate breakdown might occur due to the formation of stress-induced percolation paths, as in insulated-gate devices [14], [15], [16].”
A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability (2018, background): “[88] studied the Schottky gate reliability under forward bias stress of a p-GaN HEMT.”
Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs (2017, background): “In [19] the breakdown phenomenon has been investigated and explained by avalanche multiplication in the space charge region of the Schottky metal/p-GaN junction, whereas in [20], the time dependence of the gate leakage current degradation was found to be consistent with a defect percolation process.”
Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate (2017, background): “[43], who suggested that degradation is ini iated by the ge er ion of donor-like traps i the p-G N, clos to the AlGaN interface.”