Dong Seup Lee

Condensed Matter Physics · 2011

A researcher in the Science corpus: 3 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

• Condensed Matter Physics — 13 citations into it
• Electronic, Optical and Magnetic Materials — 13 citations into it

Whom Dong Seup Lee trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Jan Kuzmik

Who trusts Dong Seup Lee overall

1. Xiang Gao
2. Shiping Guo

Papers from Dong Seup Lee's perspective

Ordered by how strongly the researchers Dong Seup Lee trusts endorse each paper. Same corpus, a different order for every researcher.

1. Power electronics on InAlN/(In)GaN: Prospect for a record performance (IEEE Electron Device Letters)
2. High-power AlGaN/GaN HEMTs for Ka-band applications (IEEE Electron Device Letters)
3. 205-GHz (Al,In)N/GaN HEMTs (IEEE Electron Device Letters)
4. 245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment (IEEE Electron Device Letters)
5. InAlN/GaN HEMTs With AlGaN Back Barriers (IEEE Electron Device Letters)
6. AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance (IEEE Electron Device Letters)
7. Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance (IEEE Electron Device Letters)
8. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
9. Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method
10. InAlN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal

Their papers

• 245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment (2011) — 150 citations
• 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier (2011) — 256 citations
• InAlN/GaN HEMTs With AlGaN Back Barriers (2011) — 164 citations