Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method

By Jan Kuzmik, R. Javorka, A. Alam, M. Marso, M. Heuken, P. Kordoš. 2002

204 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/34ae9f9a33546eba22ad97ebd4363954ed7339af

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Jan Kuzmik

In Condensed Matter Physics

1. Jungwoo Joh
2. Jean-Francois Carlin
3. George Konstantinidis
4. Dionyz Pogany
5. Aristotelis E. Kostopoulos
6. A. Georgakilas
7. Jan Kuzmik
8. J. D. del Alamo

In Electrical and Electronic Engineering

1. Jungwoo Joh
2. J. D. del Alamo
3. Gaudenzio Meneghesso
4. Enrico Zanoni

Citations in the corpus

• InAlN/GaN HEMTs: a first insight into technological optimization (2006, background): “At V the HEMT dissipated power reaches 7 W/mm with a possible temperature of C [16].”
• Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs (2006, background): “Although in GaN is much less sensitive to thermal mechanisms than in GaAs [29], [30], we should point out that significant degradations of can appear when the heat dissipation increases (higher bias applied, higher temperature, and larger devices) due to the poor thermal conductivity of the sapphire”
• Measurement of Channel Temperature in GaN High-Electron Mobility Transistors (2009, background): “characteristics to measure channel temperature has also been proposed in GaN HEMTs [7], [8].”