Current instabilities in GaN-based devices

By I. Daumiller, Didier Théron, C. Gaquière, Andrei Vescan, R. Dietrich, A. Wieszt, H. Leier, Ramakrishna Vetury, Umesh K. Mishra, I. Smorchkova and 3 more. IEEE Electron Device Letters, 2001

157 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/12591be5beac219b55d5baeb053529dc365aa5d8

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In Condensed Matter Physics

1. Jean-Francois Carlin
2. Kevin J. Chen
3. George Konstantinidis
4. Dionyz Pogany
5. Aristotelis E. Kostopoulos
6. A. Georgakilas
7. Gaudenzio Meneghesso
8. Enrico Zanoni

In Electrical and Electronic Engineering

1. Kevin J. Chen
2. Gaudenzio Meneghesso
3. Enrico Zanoni
4. Alessandro Chini

Citations in the corpus

• AlGaN-GaN double-channel HEMTs (2005, background): “Theoretically, PAE increases during the transition from Class A mode to Class B mode (i.e., quiescent moves from V to V for this double-channel HEMT under study).”
• InAlN/GaN HEMTs: a first insight into technological optimization (2006, background): “Phenomena of current collapse [21], [22], breakdown characteristics of the HEMT [23] and free/passivated surface behavior [21]–[23] have been investigated for AlGaN/GaN HEMTs previously.”
• Surface-related drain current dispersion effects in AlGaN-GaN HEMTs (2004, background): “I. INTRODUCTION RF drain-current ( ) collapse is the major factor limitingthe output-power density at microwave frequencies in GaN-based FETs [1].”