A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

By M. Ťapajna, Jan Kuzmik. 2012

144 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/e939ec2dbebe6ef4e60ed6df25adcfc3640f5e9f