InAlN/GaN HEMTs: a first insight into technological optimization

By Jan Kuzmik, Aristotelis E. Kostopoulos, George Konstantinidis, Jean-Francois Carlin, A. Georgakilas, Dionyz Pogany. IEEE Transactions on Electron Devices, 2006

141 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/41e8d04c35cc1fe12d95cea1f719f251635840ff

Citations in the corpus

• Gallium Nitride as an Electromechanical Material (2014, unknown): “Due to the high polarization of AlN and InN components of the barrier, even higher carrier densities can be obtained using InAlN [54].”