Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction
By D. Qiao, L. Yu, S. Lau, J. Redwing, Jingyu Lin, Hongxing Jiang. 2000
156 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/988070447964444ab5f0fe796822d78969e1a52a
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In Atomic and Molecular Physics, and Optics
In Condensed Matter Physics
- Jean-Francois Carlin
- George Konstantinidis
- Dionyz Pogany
- Aristotelis E. Kostopoulos
- A. Georgakilas
- Jan Kuzmik
Citations in the corpus
- InAlN/GaN HEMTs: a first insight into technological optimization (2006, methodology): “Barrier heights were extracted from the forward – characteristics assuming the thermionic emission [4], [10] and Richardson constant of”