Random Circuit Breaker Network Model for Unipolar Resistance Switching

By S. Chae, Jae Sung Lee, Sejin Kim, S. Lee, Seo Hyoung Chang, Chunli Liu, Byungnam Kahng, Hyunjung Shin, Dong-Wook Kim, C. Jung and 3 more. 2008

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Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching (2015, methodology): “Such models employ a variety of approaches and methodologies, such as percolationbased theories [5], [7], [8], metal ions migration mechanism [4], quantum point contact theory [6], and kinetic Monte Carlo (kMC) approach [9].”
Thermochemical resistive switching: materials, mechanisms, and scaling projections (2011, methodology): “After only four iterations the filament is formed [66] (copyright Wiley-VCH Verlag GmbH & Co KGaA; reproduced with permission).”
On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy (2012, methodology): “Phenomenological models such as the network of random circuit breakers [13] have been applied to the unipolar RRAM devices.”
Resistive Random Access Memory (ReRAM) Based on Metal Oxides (2010, methodology): “Several studies have been devoted to understanding the unipolar operation of ReRAM [36], [ 47 ].”