Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films

By M. Panzer, M. Shandalov, Jeremy A. Rowlette, Y. Oshima, Yi wei Chen, Paul C. McIntyre, Kenneth E. Goodson. IEEE Electron Device Letters, 2009

162 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/c59225cf4e2f667c8614c36375ef8e683693b01e

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Daniele Ielmini
2. Federico Nardi
3. David C. Gilmer
4. Simone Balatti
5. S. Larentis
6. Andrea Padovani
7. Luca Vandelli
8. Luca Larcher

In Materials Chemistry

1. Daniele Ielmini
2. M. Wingert
3. Renkun Chen
4. Jianlin Zheng
5. Soonshin Kwon
6. Rainer Waser
7. R. Bruchhaus

Citations in the corpus

• Thermal transport in amorphous materials: a review (2016, background): “In order to investigate the discrepancy between the measurements on these thin and thick films, Panzer et al [25] performed a systematic sizedependent study on 5.6–20 nm thick hafnia films via TDTR.”
• Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling (2012, background): “linear temperature dependence of kHfO according to [28]”
• Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching (2015, background): “kTH is the thermal conductivity of the hafnium oxide [38].”